A new gallium nitride approach could raise power electronics voltage limits, improve efficiency and support smaller systems for electric vehicles, renewables and AI infrastructure alike. Researchers at EPFL's POWERlab have developed a gallium nitride (GaN) power-device design that demonstrated breakdown voltages above 3.9 kV, potentially extending the technology into higher-voltage applications.
A new gallium nitride approach could raise power electronics voltage limits, improve efficiency and support smaller systems for electric vehicles, renewables and AI infrastructure alike.
Researchers at EPFL's POWERlab have developed a gallium nitride (GaN) power-device design that demonstrated breakdown voltages above 3.9 kV, potentially extending the technology into higher-voltage...
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A new gallium nitride approach could raise power electronics voltage limits, improve efficiency and support smaller systems for electric vehicles, renewables and AI infrastructure alike. Researchers at EPFL's POWERlab have developed a gallium nitride (GaN) power-device design that demonstrated breakdown voltages above 3.9 kV, potentially extending the technology into higher-voltage applications.
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