Useful takeaways from this story.

650V devices with low on-resistance are entering production for high-efficiency power conversion.

Navitas Semiconductor has begun shipping its fifth-generation GaNFast gallium nitride (GaN) power semiconductor technology, featuring 650 V GaN FETs designed for AI infrastructure, high-performance...

Building the complete brief

The page is ready to read now. The fuller skim-friendly version will appear here automatically.

The useful part

650V devices with low on-resistance are entering production for high-efficiency power conversion. Can GaN help meet AI's growing power demands? Navitas Semiconductor has begun shipping its fifth-generation GaNFast gallium nitride (GaN) power semiconductor technology, featuring 650 V GaN FETs designed for AI infrastructure, high-performance computing, industrial electrification, and other high-power applications.

Details worth keeping

Can GaN help meet AI's growing power demands? Navitas Semiconductor has begun shipping its fifth-generation GaNFast gallium nitride (GaN) power semiconductor technology, featuring 650 V GaN FETs designed for AI infrastructure, high-performance computing, industrial electrification, and other high-power applications.

Keep reading in the app

Open the app view to save this story, compare related coverage, and continue from the same source.

Open in app