2D Transistor Breaks 60mV Switching Barrier
Can transistors switch below the conventional power limit without sacrificing useful current?
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Can transistors switch below the conventional power limit without sacrificing useful current?
A research team led by The Hong Kong Polytechnic University has developed a tunnelling field-effect transistor (TFET) that operates below the 60mV/decade Boltzmann limit, addressing a long-standing...
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Can transistors switch below the conventional power limit without sacrificing useful current? A 2D device uses quantum tunnelling to push beyond it. A research team led by The Hong Kong Polytechnic University has developed a tunnelling field-effect transistor (TFET) that operates below the 60mV/decade Boltzmann limit, addressing a long-standing challenge in developing lower-power integrated circuits.
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- A research team led by The Hong Kong Polytechnic University has developed a tunnelling field-effect transistor (TFET) that operates below the 60mV/decade Boltzmann limit, addressing a long-standing...
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A 2D device uses quantum tunnelling to push beyond it.
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