By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP replaces wire bonds and mold compounds to deliver up to 5x power density.
By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP replaces wire bonds and mold compounds to deliver up to 5x power density.
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By embedding heterogeneous Si, SiC, and GaN die directly into 12-inch silicon wafers with precision RDLs, Onsemi's EPP replaces wire bonds and mold compounds to deliver up to 5x power density.
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