A tin-based material can offer an injection route for both n-type and p-type devices. Researchers led by KAIST have developed a tin diselenide (SnSe₂) material that can efficiently inject charge into both n-type and p-type atomically thin semiconductors.
A tin-based material can offer an injection route for both n-type and p-type devices.
Researchers led by KAIST have developed a tin diselenide (SnSe₂) material that can efficiently inject charge into both n-type and p-type atomically thin semiconductors.
How do you get electricity into a semiconductor only a few atoms thick?
The page is ready to read now. The fuller skim-friendly version will appear here automatically.
A tin-based material can offer an injection route for both n-type and p-type devices. Researchers led by KAIST have developed a tin diselenide (SnSe₂) material that can efficiently inject charge into both n-type and p-type atomically thin semiconductors. How do you get electricity into a semiconductor only a few atoms thick?
Open the app view to save this story, compare related coverage, and continue from the same source.