Researchers electrically altered spin configurations in ferrimagnetic thin films, shifting their compensation temperature by up to 110 K without changing material composition, opening a route to tunable spintronic memory.
Researchers electrically altered spin configurations in ferrimagnetic thin films, shifting their compensation temperature by up to 110 K without changing material composition, opening a route to tunable...
The page is ready to read now. The fuller skim-friendly version will appear here automatically.
Researchers electrically altered spin configurations in ferrimagnetic thin films, shifting their compensation temperature by up to 110 K without changing material composition, opening a route to tunable spintronic memory.
Open the app view to save this story, compare related coverage, and continue from the same source.