Researchers discovered that the 2D material TlGaS₂ exhibits polarization both within and across its atomic layers, a rare behavior that could enable new approaches to ferroelectric transistors and non-volatile memory.
Researchers discovered that the 2D material TlGaS₂ exhibits polarization both within and across its atomic layers, a rare behavior that could enable new approaches to ferroelectric transistors and...
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Researchers discovered that the 2D material TlGaS₂ exhibits polarization both within and across its atomic layers, a rare behavior that could enable new approaches to ferroelectric transistors and non-volatile memory.
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